SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to form a gate insulating layer having uniform thickness entirely by forming a pro-oxidant region in the upper corner of a trench. CONSTITUTION: A trench(203) defining an active area is formed in a substrate. An element isolation film is buried in the trench. A pro-oxidant region(207) is formed in the top corner of the trench in order to promote the oxidation at the top corner of the trench. A gate conductive film(209) is formed on the gate insulating layer. A source region and a drain region(210) are formed in the active area which is exposed to both sides of the gate conductive film.