| 摘要 |
FIELD: metallurgy. ^ SUBSTANCE: procedure consists in sedimentation of opal film of 5.0-40.0 mcm thickness out of suspension of spherical particles of amorphous silicon dioxide in ethyl alcohol on dielectric substrate. Also, particles have average diameter 880 nm, dispersion of diameters less, than 1 % and concentration 0.52 vol. %. Further, the procedure consists in drying, in settling a layer of amorphous silicon in vacuum on internal surface of opal film pores by thermal decomposition of mixture of mono-silane with argon at concentration of 5 vol. % and pressure of gas mixture 5070 kPa, voluminous gas mixture flow rate 0.020.01 cm3/min, temperature 520540C, and duration 57 h, in etching film in water solution of hydrofluoric acid for removal of spherical particles of amorphous silicon dioxide, in inversion, repeated drying and in settling a layer of amorphous silicon on internal surface of pores of opal film under the same conditions. ^ EFFECT: creation of film inverted composite of opal-silicon with increased width of total photon forbidden-zone in spectral region of 1.5 mcm. ^ 9 ex |
