发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR THE OPERATION
摘要 PURPOSE: A semiconductor memory device and a method for the operation are provided to improve the offset electric potential of a bit line sense amplifier by removing floating state. CONSTITUTION: In a semiconductor memory device and a method for the operation, a bit line amplifier(10) sense and amplifies data loaded in a bit lien pair. A power line equalize signal generator(310) generates a power line equalize signal A power line equalize unit(13) supplies a precharge to the pull-up power line and the pull-down power line. A pull up driver(11) drives the pulls-up power line with a pull-up voltage. A pull down driver drives the pulls-down power line with a pull-down voltage.
申请公布号 KR20110066512(A) 申请公布日期 2011.06.17
申请号 KR20090123196 申请日期 2009.12.11
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHI, SUNG SOO;KWEAN, KI CHANG
分类号 G11C11/4091;G11C7/06 主分类号 G11C11/4091
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