发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR THE OPERATION |
摘要 |
PURPOSE: A semiconductor memory device and a method for the operation are provided to improve the offset electric potential of a bit line sense amplifier by removing floating state. CONSTITUTION: In a semiconductor memory device and a method for the operation, a bit line amplifier(10) sense and amplifies data loaded in a bit lien pair. A power line equalize signal generator(310) generates a power line equalize signal A power line equalize unit(13) supplies a precharge to the pull-up power line and the pull-down power line. A pull up driver(11) drives the pulls-up power line with a pull-up voltage. A pull down driver drives the pulls-down power line with a pull-down voltage.
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申请公布号 |
KR20110066512(A) |
申请公布日期 |
2011.06.17 |
申请号 |
KR20090123196 |
申请日期 |
2009.12.11 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHI, SUNG SOO;KWEAN, KI CHANG |
分类号 |
G11C11/4091;G11C7/06 |
主分类号 |
G11C11/4091 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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