METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR

摘要

PURPOSE: A method for manufacturing field effect transistor is provided to increase production by simultaneously forming a gate electrode and an electric field electrode in a first opening and a second opening . CONSTITUTION: In a method for manufacturing field effect transistor, an active layer(12) and a capping layer(14) are laminated on a substrate(10). A source electrode(16) and a drain electrode(18) are formed on the capping layer. An insulating layer(20) and a first resist layer(28) are successively formed in the top of the substrate. A first opening(32) and a second opening(34) are formed on the first resist layer. The gate electrode and electric field electrodes are formed within the first opening and the second opening at the same time.