发明名称 |
4 TRANSISTOR IMAGE SENSOR |
摘要 |
PURPOSE: A four-transistor image sensor is provided to implement a high definition image sensor by integrating a unit pixel of the image sensor in a minimum pixel region. CONSTITUTION: In a four-transistor image sensor, a first photo diode(PD1) and a second photo diode(PD2) convert incident light from the outside to an electrical signal. The transistor of a first transistor and a second transistor switch the first and second diodes. A floated diffusion area(FD) accumulates the electric signal of the first and second photo diodes. The floated diffusion area is connected to a reset transistor(RX) and a detection transistor(DX). The select transistor(SX) selectively transfers an amplified signal to an output terminal.
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申请公布号 |
KR20110066330(A) |
申请公布日期 |
2011.06.17 |
申请号 |
KR20090122941 |
申请日期 |
2009.12.11 |
申请人 |
DONGBU HITEK CO., LTD. |
发明人 |
PARK, YU BE;JUN, JUNG HAN |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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