发明名称 4 TRANSISTOR IMAGE SENSOR
摘要 PURPOSE: A four-transistor image sensor is provided to implement a high definition image sensor by integrating a unit pixel of the image sensor in a minimum pixel region. CONSTITUTION: In a four-transistor image sensor, a first photo diode(PD1) and a second photo diode(PD2) convert incident light from the outside to an electrical signal. The transistor of a first transistor and a second transistor switch the first and second diodes. A floated diffusion area(FD) accumulates the electric signal of the first and second photo diodes. The floated diffusion area is connected to a reset transistor(RX) and a detection transistor(DX). The select transistor(SX) selectively transfers an amplified signal to an output terminal.
申请公布号 KR20110066330(A) 申请公布日期 2011.06.17
申请号 KR20090122941 申请日期 2009.12.11
申请人 DONGBU HITEK CO., LTD. 发明人 PARK, YU BE;JUN, JUNG HAN
分类号 H01L27/146 主分类号 H01L27/146
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