| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD apparatus which prevents a source gas supplied to a growing region from intruding into a preheating region, and can form a superconductive thin film having a homogeneous and stable composition, and to provide a method for forming the superconductive thin film. SOLUTION: The CVD apparatus is provided with a reaction chamber which is divided into three parts in a traveling direction of a tape-shaped substrate by two shielding plates, a source-gas-spouting portion for spouting the source gas to the growing region sandwiched between these two shielding plates, a gas exhaust portion for exhausting a gas in the reaction chamber, a susceptor for heating the tape-shaped substrate, and an opening for making the tape-shaped substrate formed between the shielding plate and the susceptor travel therethrough; forms the superconductive thin film on the surface of the tape-shaped substrate by supplying the source gas to the surface of the tape-shaped substrate which travels right above the susceptor in the reaction chamber and causing a chemical reaction on the surface; and includes a shielding-gas-spouting portion for spouting a shielding gas to the susceptor approximately at a right angle. COPYRIGHT: (C)2011,JPO&INPIT |
