| 摘要 |
The present invention provides a chemical solution capable of completely removing the residues after a dry process in a short period of time, wherein the chemical solution causes less damage to low-k films than before, and prevents cracking and roughness of the Cu surface by inhibiting Cu corrosion so as to leave, rather than remove, a Cu thin film, which is formed on the Cu surface as a result of damage during a dry process. Specifically, the present invention relates to a residue-removing solution for removing residues after a dry process, comprising an amine salt of a monocarboxylic acid and/or a salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and water, the residue-removing solution comprising (A) or (B) described below: (A) an aqueous solution comprising (1) a Brønsted acid whose pKa is at least 3 at 25° C., (2) an amine salt of a monocarboxylic acid, and/or (3) at least one member selected from the group consisting of an ammonium salt, an amine salt, and a quaternary ammonium salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and (4) water, wherein the pH of the aqueous solution is equal to or less than the pKa of the monocarboxylic acid at 25° C., and the like. (B) an aqueous solution comprising (5) an amine salt of a monocarboxylic acid, and/or (6) an amine salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and (7) water, wherein the pH of the aqueous solution is equal to or greater than the pKa of the monocarboxylic acid at 25° C., and the like.
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