发明名称 |
Lateral Power MOSFET With Integrated Schottky Diode |
摘要 |
A semiconductor device includes a substrate having a first region and a second region. The first region is electrically isolated from the second region. The semiconductor device further includes a lateral field-effect transistor (FET) disposed within the first region. The lateral FET includes a first terminal and a second terminal. The semiconductor device further includes a diode disposed within the second region, the diode including a plurality of anode regions and a plurality of cathode regions. The semiconductor device further includes a first electrical connection between the first terminal of the lateral FET and the anode regions of the diode, and a second electrical connection between the second terminal of the lateral FET and the cathode regions of the diode. The first and second electrical connections are disposed over a surface of the substrate.
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申请公布号 |
US2011140200(A1) |
申请公布日期 |
2011.06.16 |
申请号 |
US20100978476 |
申请日期 |
2010.12.24 |
申请人 |
GREAT WALL SEMICONDUCTOR CORPORATION |
发明人 |
ANDERSON SAMUEL J.;OKADA DAVID N.;DASHNEY GARY;SHUMATE DAVID A. |
分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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