| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that improves dv/dt-controllability via a gate drive circuit during turn-on switching while maintaining a low loss and a high breakdown voltage. <P>SOLUTION: In order to solve the problem, the semiconductor device has such a configuration that a gate electrode 401 is disposed on a sidewall of a wide trench 423. This allows gate parasitic capacitance to be small since the gate electrode 401 is covered with a gate insulating film 402 and a thick insulating film 403 to be an interlayer film, eliminates gate potential fluctuation so as to improve dv/dt-controllability for the absence of a floating p-type layer, and secures the low loss and low noise. <P>COPYRIGHT: (C)2011,JPO&INPIT |
