发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a MEMS, a method for sealing a semiconductor element such as the MEMS, a method for forming a cavity and an associated element. <P>SOLUTION: This method of manufacturing the semiconductor element includes preparing a substrate having a non-flat three-dimensional shape and having a main surface including a substantial topography variation and forming a first cap layer having an upper surface and an under surface on the main surface. When forming the first cap layer, a local defect is introduced into the first cap layer, and the local defect is positioned in a place corresponding to the substantial topography variation, and the local defect is suitable for passing a predetermined fluid. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011115940(A) 申请公布日期 2011.06.16
申请号 JP20100267009 申请日期 2010.11.30
申请人 IMEC;KU LEUVEN RESEARCH & DEVELOPMENT 发明人 WITVROUW ANN;HASPELAGH LUC;GUO BIN;SEVERI SIMONE;CLAES GERT
分类号 B81C1/00 主分类号 B81C1/00
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