| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an imaging element that can drastically reduce the effective gate capacity of an amplifying transistor without changing the gate area thereof, and greatly reduce the total parasitic capacity, and a camera system. <P>SOLUTION: A pixel 200 includes an embedded photodiode 111, the amplifying transistor 114, and a transfer transistor 112 which transfers a charge subjected to photoelectric conversion by the photodiode 111 to the gate of the amplifying transistor 114. The amplifying transistor 114 forms a source follower circuit that includes the gate for input and the source for output, and is formed within a second semiconductor substrate 206 electrically isolated from a first semiconductor substrate 202 where at least the embedded photodiode and transfer transistor are formed, and the substrate of the amplifying transistor is connected to the source of the amplifying transistor. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
