发明名称 TUNNELING MAGNETORESISTANCE READ HEAD HAVING A COFE INTERFACE LAYER AND METHODS FOR PRODUCING THE SAME
摘要 According to one embodiment, a method for producing a Tunneling Magnetoresistance (TMR) read head includes forming a fixed layer, forming an insulating barrier layer above the fixed layer, forming a free layer above the insulating barrier layer, and annealing the free layer, the fixed layer, and the insulating barrier layer. The fixed layer includes a first ferromagnetic layer having a CoxFe (0≦̸x≦̸15) interface layer and a Co-based amorphous metallic layer between the CoxFe interface layer and the insulating barrier layer, an antiparallel coupling layer below the first ferromagnetic layer, and a second ferromagnetic layer below the antiparallel coupling layer. In another embodiment, a TMR read head includes the layers described above, and may be included in a magnetic data storage system.
申请公布号 US2011141613(A1) 申请公布日期 2011.06.16
申请号 US20100948072 申请日期 2010.11.17
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B. V. 发明人 SAKAMOTO KOJI;NISHIOKA KOICHI
分类号 G11B5/33;B05D5/00;G11B21/02 主分类号 G11B5/33
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