NICHT FLÜCHTIGES SPEICHERELEMENT, VERFAHREN ZU SEINER HERSTELLUNG SOWIE NICHT FLÜCHTIGE HALBLEITERVORRICHTUNG MIT DEM NICHT FLÜCHTIGEN SPEICHERELEMENT

摘要

A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0 < x < 2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x < y < 2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.