| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To significantly reduce the number of parameters for generating a read voltage corresponding to a threshold level. <P>SOLUTION: A semiconductor memory comprises a memory cell array and a control circuit. In the memory cell array, a plurality of memory cells connected to word lines and bit lines are arranged in matrix. The control circuit controls potentials of the word lines and the bit lines. In a reading operation for reading data from the memory cell, the control circuit starts non-selected word lines adjacent to a selected word line among the word lines, and thereafter starts the selected word line. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
