| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce parasitic capacitance formed between multilayer wiring. <P>SOLUTION: A semiconductor device includes first wiring, a first interlayer insulating film for covering the first wiring, a second interlayer insulating film abutting on one portion of an area on the first interlayer insulating film, and second wiring on the first interlayer insulating film and the second interlayer insulation film on an insulating surface, and also includes the stacked first and second interlayer insulating films at a region where the first wiring overlaps with the second wiring. The stacking of an interlayer insulating film between the first wiring and the second wiring reduces the parasitic capacitance. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
