A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source.
申请公布号
WO2011026129(A3)
申请公布日期
2011.06.16
申请号
WO2010US47379
申请日期
2010.08.31
申请人
LAM RESEARCH CORPORATION;DHINDSA, RAJINDER;KOSHISHI, AKIRA;MARAKHTANOV, ALEXEI