Method for thermal treatment of silicon wafer, involves regulating parameter of treatment of workpiece such that determined value approximates to threshold value to obtain desired characteristic of workpiece

摘要

The method involves partially making a process chamber of a material permeable for X-rays. A diffraction reflex is observed, and a value of a parameter characteristic for the diffraction reflex is determined. The determined value of the characteristic parameter is compared to a predetermined threshold value. A parameter of thermal treatment of a workpiece e.g. silicon wafer, is regulated based on the result of the comparison such that the determined value approximates to the threshold value during the treatment to obtain a desired characteristic of the workpiece. An independent claim is also included for a device for thermal treatment of a workpiece.