| 摘要 |
965,818. Semi-conductor devices. COMPAGNIE GENERALE DE TELEGRAPHIE SANS FIL. April 30, 1962 [May 4, 1961; April 4, 1962], No. 16522/62. Heading H1K. A substance is deposited according to a pattern on a semi-conductor wafer by coating the wafer with a light-setting resin, exposing to a positive image and treating the resin so that the unexposed regions are softened and applying the substance so that it adheres to the softened areas. In one example, a silicon wafer comprising a PN junction is provided with a 10Á coating of poly(butanediol-1,4-cinnamylidenemalonate from a solution of this in trichloroethylene sensitized with 0.45% of methyl benzothiazolylidene-dithioacetate. The layer is exposed through a positive mask to a mercury vapour lamp and then heated to 110‹ C. and dusted with a dispersion of impurity material such as a silicate of magnesia + phosphoric acid which adheres to the unexposed areas of the resin coating. Excess powder is removed by washing in decaline and the wafer then subjected to normal diffusion techniques to provide an NPN transistor structure. Instead of heating to 110 ‹ C., softening of the resin may be achieved by turpentine oil. Other lightsetting resins such as poly(vinylcinnamates), poly(diolcinnamylidenemalonates) and poly - (glycol - anthranylmethylmalonates) may be used. Carbon-tetrachloride or methylisobutylketone may be used as softening agents for a resin of poly(tetramethylene - cinnamylidenemalonate). Germanium may be used in place of silicon and the impurities may consist of arsenic, phosphorus and boron. |
