| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a Zn based buffer layer which well covers a base material and is formed at a practical reaction speed with no need of providing a fine particle layer that functions as a nucleus for crystal growth or a catalyst. <P>SOLUTION: A manufacturing method of a buffer layer includes a film forming step that forms, by a liquid phase method, a Zn compound layer whose main component is Zn(S, O) and/or Zn(S, O, OH) with a reactive temperature set at 70-95°C by using a reactive liquid containing: a component (Z) which is at least one kind of zinc source; a component (S) which is at least one kind of sulfur source; a component (C) which is at least one kind of citric acid compound; a component (N) which is at least one kind selected from a group consisting of ammonia and ammonium salt; and water, with a concentration of the component (C) being 0.001-0.25 M, a concentration of the component (N) being 0.001-0.40 M, and a pH being 9.0-12.0 before start of reaction. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
