| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-performance semiconductor apparatus, which can be easily introduced to a MOS process, can reduce leak current between an emitter and a base (field intensity), and is hardly affected by noise or surge voltage, and to provide a method for manufacturing the same. <P>SOLUTION: The emitter is formed by performing ion implantation twice with a conductive film as a mask. A second emitter area 111b is formed by low-concentration impurity ion implantation, and a first emitter area 111a is formed by high-concentration impurity ion implantation. Consequently, the second emitter area with low concentration is formed at the periphery of the emitter to moderate the electric field or reduce the leak current. Since the conductive film is connected to an emitter electrode 116, the device is hardly affected by noise. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
