METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which an insulating member of high quality can be formed at a periphery of a semiconductor element by using a coating method and a depositing method. SOLUTION: The method of manufacturing the semiconductor device 100 includes the processes of: additionally forming an insulating film 10 made of an Si-based insulating material on a semiconductor substrate 2; forming a catalyst metal film 11 on the insulating film 10; subjecting the insulating film 10 to oxidation processing using the catalyst metal film 11 as a catalyst; forming a gate insulating film 4 by processing the insulating film 10 having been subjected to the oxidation processing; and forming an MOSFET 1 including the gate insulating film 4. COPYRIGHT: (C)2011,JPO&INPIT