RESISTIVE MEMORY DEVICE, AND METHOD OF FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a resistive memory device advantageous for high integration, and to provide a method of forming the same.

SOLUTION: The resistive memory device includes a lower electrode; a variable resistance layer on the lower electrode; and an upper electrode on the variable resistance layer. In the resistive memory, the variable resistance layer includes a conductive polymeric layer which may react with the upper electrode to form an oxidation layer.

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