| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element that improves the efficiency of light emission. SOLUTION: A nitride semiconductor laser element 100 (nitride semiconductor element) includes a GaN substrate 10 in which a plane having an off angle in an a-axis direction with regard to an m plane is made a major growth plane 10a, and nitride semiconductor layers 11-18 formed on the major growth plane 10a of the GaN substrate 10. A semiconductor layer contacting with the major growth plane 10a is an InGaN layer 11 (nitride semiconductor layer containing In). Moreover, on the InGaN layer 11, a lower clad layer 12 (nitride semiconductor layer containing Al) composed of AlGaN is formed so as to contact with the upper plane of the InGaN layer 11. COPYRIGHT: (C)2011,JPO&INPIT
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