发明名称 |
METHOD OF FABRICATING HIGH-K/METAL GATE DEVICE |
摘要 |
The present disclosure provides a method that includes providing a semiconductor substrate; forming a gate structure over the semiconductor substrate, first gate structure including a dummy dielectric and a dummy gate disposed over the dummy dielectric; removing the dummy gate and the dummy dielectric from the gate structure thereby forming a trench; forming a high-k dielectric layer partially filling the trench; forming a barrier layer over the high-k dielectric layer partially filling the trench; forming an capping layer over the barrier layer partially filling the trench; performing an annealing process; removing the capping layer; forming a metal layer over the barrier layer filling in a remainder of the trench; and performing a chemical mechanical polishing (CMP) to remove the various layers outside the trench.
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申请公布号 |
US2011143529(A1) |
申请公布日期 |
2011.06.16 |
申请号 |
US20090639630 |
申请日期 |
2009.12.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE DA-YUAN;HSU KUANG-YUAN;YU XIONG-FEI;LEE WEI-YANG;YEH MATT |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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