发明名称 |
METHOD FOR MANUFACTURING BULK WAVE ACOUSTIC RESONATOR OF FBAR TYPE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a bulk wave acoustic resonator of an FBAR type. SOLUTION: The method of manufacturing the bulk wave acoustic resonator (FBAR) including locally a partially-suspended thin layer of a piezoelectric material 10 includes steps for: forming at least one first so-called lower electrode 12 on the surface of a thin layer of the piezoelectric material 10; depositing a so-called sacrificial layer on the surface of the thin layer of the piezoelectric material 10 and on the surface of the first electrode defining a first set; assembling the first set with a second substrate 20; forming at least one second electrode called as an upper electrode 21 on the opposite face of the thin layer of the piezoelectric material 10 from a face comprising the first electrode; and eliminating the sacrificial layer so as to expose the thin layer of the piezoelectric material 10 and the first electrode, and to define the bulk wave resonator. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011120241(A) |
申请公布日期 |
2011.06.16 |
申请号 |
JP20100270436 |
申请日期 |
2010.12.03 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
PIJOLAT MATHIEU |
分类号 |
H03H3/02;H01L41/09;H01L41/18;H03H9/17;H03H9/54 |
主分类号 |
H03H3/02 |
代理机构 |
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地址 |
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