SPIN-TRANSFER SWITCHING MAGNETIC ELEMENT UTILIZING A COMPOSITE FREE LAYER COMPRISING A SUPERPARAMAGNETIC LAYER

摘要

A system and method for forming a magnetic tunnel junction (MTJ) storage element utilizes a composite free layer structure (214, 216, 218). The MTJ element includes a stack comprising a pinned layer (206, 208, 210), a barrier layer (212), and a composite free layer. The composite free layer includes a first free layer (214), a superparamagnetic layer (218) and a nonmagnetic spacer layer (216) interspersed between the first free layer and the superparamagnetic layer. A thickness of the spacer layer controls a manner of magnetic coupling between the first free layer and the superparamagnetic layer.