METHOD OF CLEANING AND FORMING A NEGATIVELY CHARGED PASSIVATION LAYER OVER A DOPED REGION
摘要
The present invention generally provides a method of forming a high efficiency solar cell device by preparing a surface and/or forming at least a part of a high quality passivation layer on a silicon containing substrate. Embodiments of the present invention may be especially useful for preparing a surface of a p-type doped region formed on a silicon substrate so that a high quality passivation layer can be formed thereon. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface.
申请公布号
WO2011071937(A2)
申请公布日期
2011.06.16
申请号
WO2010US59318
申请日期
2010.12.07
申请人
APPLIED MATERIALS, INC.;STEWART, MICHAEL, P.;ZHOU, LIZHONG;SHU, JEN, Y.;XU, LI (SHERRY)
发明人
STEWART, MICHAEL, P.;ZHOU, LIZHONG;SHU, JEN, Y.;XU, LI (SHERRY)