发明名称 |
DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To reduce effect due to hydrogen in carrying out hydrogen plasma treatment in the thin-film transistor substrate of a display device. SOLUTION: Copper wiring formed on an amorphous silicon layer formed of an amorphous silicon film is provided with a thin-film transistor substrate having a copper alloy layer 107A formed of alloy with copper, as main components, which contains elements in which the generation energy of hydride is negative as first additional elements and second additional elements, and a pure copper layer 107B formed of pure copper on the copper alloy layer. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011119467(A) |
申请公布日期 |
2011.06.16 |
申请号 |
JP20090275593 |
申请日期 |
2009.12.03 |
申请人 |
HITACHI DISPLAYS LTD;PANASONIC LIQUID CRYSTAL DISPLAY CO LTD |
发明人 |
SUZUKI TAKAAKI;TAKAHASHI TAKUYA;ASANUMA HARUHIKO |
分类号 |
H01L29/786;C22C9/00;C22C9/01;G02F1/1368;G09F9/30;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L23/52;H01L23/522;H01L29/417;H01L29/423;H01L29/49 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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