| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup device, enabling a global shutter operation, and facilitating acquisition of a high-definition image. SOLUTION: The solid-state imaging apparatus is constituted by two-dimensionally arranging a plurality of pixel circuits 11 each including: a memory circuit constituted of a photodiode 1 which is a photoelectric conversion element formed on a semiconductor substrate 19, a pass transistor 6 constituted of a thin film transistor, and a storage capacitor 7, and stores a signal charge generated by the photodiode 1 in the storage capacitor 7 via the pass transistor 6; and an output circuit constituted of an output transistor 9 which is a field effect transistor formed on the semiconductor substrate 19, and outputs signal voltage according to the signal charge stored in the storage capacitor 7; wherein a band gap of a semiconductor thin film 31 constituting the pass transistor 6 is larger than a band gap of the semiconductor substrate 19. COPYRIGHT: (C)2011,JPO&INPIT
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