PROCESS FOR PRODUCTION OF PHOTOELECTRIC CONVERSION DEVICE

摘要

Disclosed is an high-efficiency photoelectric conversion device having a crystalline silicon i layer formed in a photoelectric conversion layer. Also disclosed is a process for producing a photoelectric conversion device (100), which involves a step of forming, on a substrate (1), a photoelectric conversion layer (3) that contains an i layer (42) mainly composed of crystalline silicon. In the process, the upper limit of the concentration of an impurity in the i layer (42) is determined depending on the Raman ratio of the i layer (42), and the i layer (42) having an impurity concentration equal to or lower than the determined upper limit is formed. Alternatively, the upper limit of the concentration of an impurity gas in the film formation atmosphere is determined depending on the Raman ratio of the i layer (42), and the i layer (42) is formed while controlling the concentration of the impurity gas in such a manner that the concentration can be adjusted to a level equal to or lower than the determined upper limit.