发明名称 |
NANOWIRE STRUCTURED PHOTODIODE WITH A SURROUNDING EPITAXIALLY GROWN P OR N LAYER |
摘要 |
<p>An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.</p> |
申请公布号 |
WO2011072030(A1) |
申请公布日期 |
2011.06.16 |
申请号 |
WO2010US59496 |
申请日期 |
2010.12.08 |
申请人 |
ZENA TECHNOLOGIES, INC.;YU, YOUNG-JUNE;WOBER, MUNIB |
发明人 |
YU, YOUNG-JUNE;WOBER, MUNIB |
分类号 |
G02B6/26 |
主分类号 |
G02B6/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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