发明名称 METHOD FOR FABRICATING ZNO THIN FILM
摘要 PURPOSE: A method for fabricating Zno thin film is provided to implement an excellent oxidation zinc thin film by performing a post heat treatment of a deposited oxidation zinc thin film. CONSTITUTION: In a method for fabricating Zno thin film, an oxidation zinc thin film(103) is deposited on a substrate(101) through pulse laser deposition. The deposited oxidation zinc thin film is processed through a post heat treatment. The substrate temperature making an oxidation zinc thin film grown up is 300~500°C. The temperature required for the post heat treatment is 500~900°C. The distance between a target and a substrate is 3~6cm, when applying pulse laser deposition.
申请公布号 KR20110066033(A) 申请公布日期 2011.06.16
申请号 KR20090122771 申请日期 2009.12.10
申请人 LG DISPLAY CO., LTD. 发明人 KIM, JAE HONG
分类号 H01L21/3105 主分类号 H01L21/3105
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