| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a microelectronic device without causing failure of the device by a short circuit, due to reduced capacitance bonding between a microelectronic device body and a sealing layer. <P>SOLUTION: This method for manufacturing a sealed cavity 15 included in the microelectronic device, includes a process of forming a sacrificial layer in a position for forming at least the cavity, a process of depositing a membrane layer 12 on the sacrificial layer, a process of patterning the membrane layer 12 on at least two separated membrane layer blocks 121 and 122, a process of removing the sacrificial layer via a hole 14 arranged in the membrane layer 12, and a process of sealing the cavity 15 by sealing the membrane layer by silicon oxide 16, an aluminum layer 17 and a bond pad layer 19, and the process of pattering the membrane layer is performed after removing the sacrificial layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
