| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce contact resistance to a source electrode layer or a drain electrode layer electrically connected to an oxide semiconductor layer in a thin-film transistor using the oxide semiconductor layer. <P>SOLUTION: The source electrode layer or the drain electrode layer is formed in a layered structure of two layers or more, and one layer abutting on the oxide semiconductor layer from among the layer stack is formed of metal having a work function smaller than that of the oxide semiconductor layer, or an alloy of such metal. As a material of the second or subsequent source or the drain electrode layer, an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, an alloy with the elements as constituents, an alloy obtained by combining the elements or the like is used. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
