| 摘要 |
PROBLEM TO BE SOLVED: To overcome the problem with a conventional plasma CVD method, wherein it is difficult to form a silicon layer with superior crystallinity in the initial stage of film growth by the plasma CVD method. SOLUTION: A semiconductor device is characterized by comprising a titanium oxide layer mainly made of titanium oxide and a crystal silicon layer which are sequentially formed on a substrate from the substrate side, wherein the titanium oxide layer touches the crystalline silicon layer. COPYRIGHT: (C)2011,JPO&INPIT |
