| 摘要 |
PROBLEM TO BE SOLVED: To prevent a word line drawn out onto an element isolation insulating film from being disconnected when forming a silicide layer. SOLUTION: Outside a region where a memory cell transistor is to be formed, the element isolation insulating film 2a is formed in a wide range. On a surface of the element isolation insulating film 2a, a plurality of groove-like recesses 2b are formed in a direction perpendicular to the word line WL. Upon forming the word line WL on top thereof, a polycrystalline silicon film serving as a second conductive film configuring the word line WL is embedded in the recesses 2b. After forming the word line WL, the silicide layer is formed on top of the word line WL. At this time, the shortage of silicon required for a silicide reaction can be supplied from the inside of the recesses 2b, thereby preventing a disconnection. COPYRIGHT: (C)2011,JPO&INPIT
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