发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that, in a conventional semiconductor device where an operational current is determined in accordance with a bias voltage, variation in driving capability may become large among a plurality of amplifiers. SOLUTION: A semiconductor device of the present invention has a power supply wiring 10 which is disposed in a longer-side direction of a semiconductor chip and in which a voltage supply source is connected to one end, a bias wiring 12 which is disposed in the longer-side direction of the semiconductor chip and transfers a bias voltage Vb, a plurality of amplifiers 20a, 20b of which the operational current is determined based on a voltage difference between a voltage of the power supply wiring 10 and a voltage of the bias wiring and which are arrayed in the longer-side direction of the semiconductor chip, a bias voltage generating circuit 21 which is provided in one end of the bias wiring 12 and generates the bias voltage Vb, and a bias adjusting voltage generating circuit 23 which is provided in another end of the bias wiring 12 and generates a bias adjusting voltage Vadj having a voltage value different from that of the bias voltage Vb. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011119452(A) 申请公布日期 2011.06.16
申请号 JP20090275494 申请日期 2009.12.03
申请人 RENESAS ELECTRONICS CORP 发明人 MATSUMOTO ICHIRO;MATSUDA SATORU;YASUDA TSUKASA
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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