发明名称 Semiconductor Devices Including Voltage Switchable Materials for Over-Voltage Protection
摘要 Semiconductor devices are provided that employ voltage switchable materials for over-voltage protection. In various implementations, the voltage switchable materials are substituted for conventional die attach adhesives, underfill layers, and encapsulants. While the voltage switchable material normally functions as a dielectric material, during an over-voltage event the voltage switchable material becomes electrically conductive and can conduct electricity to ground. Accordingly, the voltage switchable material is in contact with a path to ground such as a grounded trace on a substrate, or a grounded solder ball in a flip-chip package.
申请公布号 US2011140273(A1) 申请公布日期 2011.06.16
申请号 US201113034450 申请日期 2011.02.24
申请人 发明人 KOSOWSKY LEX
分类号 H01L23/498 主分类号 H01L23/498
代理机构 代理人
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