发明名称 |
SEMICONDUCTOR DEVICE WITH OXYGEN-DIFFUSION BARRIER LAYER AND METHOD FOR FABRICATING SAME |
摘要 |
Methods and apparatus are provided for fabricating a transistor. The transistor comprises a gate stack (142, 144, 146) overlying a semiconductor material (104, 106, 108, 110). The gate stack comprises a deposited oxide layer (126) overlying the semiconductor material, an oxygen-diffusion barrier layer (128) overlying the deposited oxide layer, a high-k dielectric layer (134) overlying the oxygen-diffusion barrier layer, and an oxygen-gettering conductive layer (138) overlying the high-k dielectric layer. The oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive layer. |
申请公布号 |
WO2011037700(A3) |
申请公布日期 |
2011.06.16 |
申请号 |
WO2010US45582 |
申请日期 |
2010.08.16 |
申请人 |
FREESCALE SEMICONDUCTOR INC.;CHOWDHURY, MURSHED, M.;SCHAEFFER, JAMES, K. |
发明人 |
CHOWDHURY, MURSHED, M.;SCHAEFFER, JAMES, K. |
分类号 |
H01L29/78;H01L21/336;H01L21/8238 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|