SOLID-STATE IMAGING DEVICE

摘要

Disclosed is a solid-state imaging device comprising a semiconductor substrate (151), multiple photoelectric conversion units (161) that are formed on the semiconductor substrate (151), a separation unit (163), a color filter (169), and an output circuit (162). The semiconductor substrate (151) has a light incident surface and a charge detection surface. The separation unit (163) is formed between the photoelectric conversion units (161), and has a silicon layer (175) that is embedded in the semiconductor substrate (151). The color filter (169) is formed on the light incident surface side, and the output circuit (162) is formed on the charge detection surface side. The silicon layer comprises amorphous silicon or polycrystalline silicon.