| 摘要 |
The present invention relates to an apparatus for growing silicon ingots, comprising: a vacuum chamber consisting of one or more hollow bodies (100), each of which has a guide member (110); a crucible arranged within the vacuum chamber; a heater arranged around the crucible in the vacuum chamber; and a heat-insulating member arranged around the heater in the vacuum chamber. The present invention also relates to a body for the vacuum chamber for the apparatus for growing silicon ingots. The apparatus for growing silicon ingots of the present invention is advantageous in that cooling water guided by the guide member (110) arranged in the main body (100) reaches an upper flange (105) of the main body (100), smoothly flows along the lower portion of the upper flange (105), and is discharged, thus effectively cooling the upper portion of the main body (100) and the upper flange (105) by means of the simple configuration of the apparatus of the present invention. |
