| 摘要 |
<p>PURPOSE: A developing treatment method for a substrate, and a computer memory device for performing thereof are provided to properly produce a resist pattern on a resist film for EUV on the substrate. CONSTITUTION: A developing treatment method for a substrate comprises a step of supplying a developer to the substrate for developing a resist film for EUV. The temperature of the developer is 5~23deg C. The developing treatment is performed for 10~30second. The concentration of the developer is less than 2.38mass%.</p> |
