| 摘要 |
<p>PURPOSE: A method of manufacturing a flash memory device is provided to shorten a movement route of an electric charge by filing a silicon or a conductive material into an element isolation film. CONSTITUTION: A tunnel oxide film(140) is formed on the active area of a semiconductor substrate(100). A floating gate(160) is formed on the tunnel oxide film. A gate insulating layer(180) and a control gate(200) are formed on the floating gate. A photoresist are coated in the front side of the semiconductor substrate including the floating gate and the control gate. The photoresist pattern is formed by patterning the coated photoresist.</p> |
