| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing a silicon single crystal where the deposition and sticking of SiO<SB>2</SB>in a furnace is effectively suppressed when the silicon single crystal is produced by a floating zone method using a silicon raw material containing oxygen. SOLUTION: The apparatus 10 for producing the silicon single crystal 3 using the floating zone method includes: the furnace C to house the silicon raw material 1 containing oxygen and the silicon single crystal 3 grown on a seed crystal 2; an induction heating coil 8 which is positioned between the silicon raw material 1 and the seed crystal 2 in the furnace, where a melting zone M is formed by melting the silicon raw material 1 and where the silicon single crystal 3 is grown on the seed crystal 2; and an inert gas blowing means 9 which is positioned between the silicon raw material 1 and the induction heating coil 8 and where SiO gas generated by melting the silicon raw material 1 based on the blowing of the inert gas is diffused outward. COPYRIGHT: (C)2011,JPO&INPIT |
