| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device including a lithography process that can increase the yields of a three-dimensional stacked device. <P>SOLUTION: In the method for manufacturing a semiconductor device, i.e., a three-dimensional stacked device including a plurality of layers stacked on a substrate, each of the plurality of layers having a device structure including device circuits, original plates of more than a certain level of quality, out of a plurality of original plates used in the lithography process of the plurality of layers, having a same pattern for the device circuit and ranked as to quality based on defects of the original plates, quality based on transferability from the original plates to the substrate, or quality about the number of uses of the original plates, are used in the lithography process of lower layers. Of the plurality of original plates, original plates except the original plates of more than the certain level of quality are used in the lithography process of upper layers. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
