METHOD OF REPRODUCING SEMICONDUCTOR SUBSTRATE, METHOD OF PREPARING REPRODUCED SEMICONDUCTOR SUBSTRATE, AND METHOD OF PREPARING SOI SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a suitable method for reproduction of a semiconductor substrate.

SOLUTION: The method of reproducing a semiconductor substrate performs an etching process of removing an insulating layer from a semiconductor substrate having projections including a damaged semiconductor region and the insulating layer at the periphery of the semiconductor substrate, an etching process of selectively removing a damaged semiconductor region with respect to an undamaged semiconductor region using a liquid mixture containing a substance oxidizing a semiconductor material forming the semiconductor substrate, a substance dissolving the oxidized semiconductor material, and a substance controlling the speed of oxidizing the semiconductor material and the speed of dissolving the oxidized semiconductor material, and polishing the surface of the semiconductor substrate after the etching process of selectively removing the damaged semiconductor region.

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