发明名称 |
Phase Change Memory with Various Grain Sizes |
摘要 |
A memory device includes a phase change element, which further includes a first phase change layer having a first grain size; and a second phase change layer over the first phase change layer. The first and the second phase change layers are depth-wise regions of the phase change element. The second phase change layer has a second average grain size different from the first average grain size.
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申请公布号 |
US2011140066(A1) |
申请公布日期 |
2011.06.16 |
申请号 |
US201113029436 |
申请日期 |
2011.02.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIANG CHUN-SHENG;LEE TZYH-CHEANG;YANG FU-LIANG |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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