发明名称 |
III-Nitride Monolithic IC |
摘要 |
III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.
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申请公布号 |
US2011143517(A1) |
申请公布日期 |
2011.06.16 |
申请号 |
US201113027912 |
申请日期 |
2011.02.15 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BEACH ROBERT;BRIDGER PAUL |
分类号 |
H01L21/761;H01L21/335;H01L21/76;H01L21/762;H01L27/095;H01L29/20 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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