SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device using an oxide semiconductor having stable electric characteristics.

SOLUTION: An insulating layer including many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer such as hydrogen or moisture (hydrogen atom or compound including hydrogen atom such as H2O) are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer including defects, thus reducing the impurity concentration in the oxide semiconductor layer.

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