发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem of the pressure increasing, which leads to the cause of supplied surplus gas to a gas supply system when an opening and closing valve opens next time, caused by the leakage of a flow rate adjusting valve while the flow rate adjusting valve is closed because the passage system between the flow rate adjusting valve and the opening and closing valve has a certain capacity although the flow rate control of gas in semiconductor manufacturing process is performed by a mass flow controller where a valve with good closing characteristics is inserted in the output side of the flow rate adjusting valve because a small amount of gas flows out when it is closed and the flow rate adjusting valve used here is put the emphasis on adjusting flow rate. SOLUTION: There is provided the method for manufacturing the semiconductor device which detects the leakage amount of gas flow when closing the flow control valve by measuring the pressure between the flow control valve on the gas discharge side of the mass flow controller and the opening and closing valve. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011119433(A) 申请公布日期 2011.06.16
申请号 JP20090275232 申请日期 2009.12.03
申请人 RENESAS ELECTRONICS CORP 发明人 ISHIDA KATSUSHI;KATAYAMA KATSUO
分类号 H01L21/285;C23C16/08;C23C16/52;H01L21/28;H01L21/3065;H01L21/3213;H01L21/768 主分类号 H01L21/285
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